Low-defect-density ZnO homoepitaxial films grown by low-temperature ALD

We report atomic layer deposition (ALD) of ZnO thin films on O-polar surface crystalline substrates at the relatively low temperatures 120, 150, and 200 °C. The as-grown are studied with aberration-corrected transmission electron microscopy diffraction contrast, photoluminescence (PL), photovoltage (SPV) spectroscopy. find that homoepitaxial have a monocrystalline structure density basal stacking faults comparable to substrate (∼1011 cm−2) can induce high lattice strain due their interaction inversion domain boundaries. narrow excitonic PL linewidth (2 meV 8 K) sharp SPV bandgap transition confirm quality films. Despite similarities in film properties, growth temperature has an effect spatial distribution intrinsic defects. Our results demonstrate considerable potential ALD homoepitaxy for fabricating high-quality nanostructures attaining viable p-type ZnO.